Patent filing no.: 737/KOL/2013
Technology title: Uniaxial MEMS piezoresistive accelerometer with enhanced cross-axis signal reduction
With advancement in the automotive and aerospace sector, inertial navigation systems are becoming increasingly complex with a constant need for precision sensors to meet such requirements. As with any system, improvements are possible when the application is specifically defined and it is expected that this technology will prove to be a step in the right direction for the development of robust inertial sensors.
Technology title: Uniaxial MEMS piezoresistive accelerometer with enhanced cross-axis signal reduction
1.
A brief description
of the technology
MEMS accelerometers are micromechanical inertial sensors
used for aerospace, civil, automotive, industry and consumer electronics
applications. Uniaxial MEMS piezoresistive accelerometers are primarily used in
strategic domains such as navigation and guidance of aircrafts and ballistic
missiles. Our technology involves the conceptualization of a single-axis MEMS
piezoresistive accelerometer variant designed for inertial navigation systems
with enhanced crosstalk (signals along axes other than the primary sensing
axis) rejection. Crosstalk is a significant aberration in accelerometer output
and can severely interfere with precise definition of position and orientation
which can result in catastrophic disasters. The technology is aimed at creating
a system which can operate efficiently within an inertial measurement unit.
2.
Commercial prospect of
the technology
Accelerometers are indispensable in applications
involving motion, ranging from kinesiological studies to motion guidance in
ballistic systems. It is expected that important industrial sectors such as
automotive, aerospace, and strategic should benefit from such a technology, not
to mention the increasing applications of MEMS inertial sensors in the field of
consumer electronic gadgets.
3.
Advantages of this
technology over the already existing methods
Highly precise uniaxial sensing with robust linearity,
appreciable sensitivity due to the mechanical design layout and added
flexibility of electrical design layout on either wafer surface. Extremely
low-noise and ~1000g shock survivability under packaged conditions provide
further value addition. The fundamental conceptualization of the design has
been on the basis of measurements carried out on a slightly older variant which
exhibits appreciable performance.
4.
A summary of the
technical details involved
The conceptualized device is a precisely bulk
micromachined silicon-on-insulator micromechanical piezoresistive accelerometer
with aircraft navigation being the primary application. Ion implanted
piezoresistors connected through a metalized Wheatstone bridge which serves as
the basic signal transduction element. Deep reactive ion etching is used for
realization of the mechanical structure of the sensor. The low noise property
of such sensors is achieved through proper doping and bulk micromachining of
the structure while the operational mechanism ensures high linearity.
5.
Future prospects of
the technology
With advancement in the automotive and aerospace sector, inertial navigation systems are becoming increasingly complex with a constant need for precision sensors to meet such requirements. As with any system, improvements are possible when the application is specifically defined and it is expected that this technology will prove to be a step in the right direction for the development of robust inertial sensors.
Inventors: Prof. Tarun Kanti Bhattacharya, Mr. Anindya Lal Roy
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